STMicroelectronics STF11NM80 MOSFET Nチャネル 800ボルト 11アンペア パワー MDmesh

Width: 4.6 mm

Height: 9.3 mm

Length: 10.4 mm

Fall Time: 15 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 43.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V