STMicroelectronics STGIPN3H60 IGBTモジュール SLIMM Nano 3A 600V 3相 IGBTブリッジ

Technology: Si

Unit Weight: 6.864 g

Configuration: 3-Phase Inverter

Mounting Style: Through Hole

Pd - Power Dissipation: 9.7 W

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 3 A