STMicroelectronics STGW25S120DF3 IGBTトランジスタ IGBTおよびパワーバイポーラ

Technology: Si

Unit Weight: 5.420 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 50 A