STMicroelectronics STN851 BJTs - バイポーラトランジスタ NPN 低電圧高速スイッチ

Width: 3.5 mm

Height: 1.8 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 350

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 320 mV