STMicroelectronics STS1NK60Z MOSFET Nチャネル 600ボルト 0.25A ゼナーダイオード SuperMESH

Width: 4 mm

Height: 1.65 mm

Length: 5 mm

Fall Time: 28 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 5.5 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 250 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 15 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V