Texas Instruments CSD16408Q5C MOSFETs デュアルクール Nチャネル NexFET パワーMOSFET

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 10.8 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 105.800 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 11.3 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 S

Rds On - Drain-Source Resistance: 5.4 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V