Texas Instruments CSD22205LT MOSFETs -8V Pチャネル NexFE T パワーMOSFET sin A 595-CSD22205L

Fall Time: 32 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 8.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 600 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 7.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10.4 S

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 1.05 V