Texas Instruments CSD25211W1015 MOSFET PCh NexFET パワーMOSFET

Width: 1 mm

Height: 0.625 mm

Length: 1.5 mm

Fall Time: 14.2 ns

Rise Time: 8.8 ns

Technology: Si

Unit Weight: 1.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 3.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 13.6 ns

Typical Turn-Off Delay Time: 36.9 ns

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 800 mV