Texas Instruments CSD86330Q3D MOSFETs シンク バック NexFET パワーブロック MOSFET

Width: 3.3 mm

Height: 1.5 mm

Length: 3.3 mm

Fall Time: 1.9 ns, 4.2 ns

Rise Time: 7.5 ns, 6.3 ns

Technology: Si

Unit Weight: 64 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Development Kit: CSD86330EVM-717, TPS40322EVM-679

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6.2 nC, 12 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Typical Turn-On Delay Time: 4.9 ns, 5.3 ns

Typical Turn-Off Delay Time: 8.5 ns, 15.8 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 52 S, 82 S

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V, 1.6 V