Texas Instruments CSD87331Q3D MOSFETs 30V シンク バック NexFET パワーブロック

Width: 3.3 mm

Height: 1.5 mm

Length: 3.3 mm

Fall Time: 1.3 ns, 2.4 ns

Rise Time: 4.5 ns, 4.7 ns

Technology: Si

Unit Weight: 41 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 2.7 nC, 6.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 3.4 ns, 3.8 ns

Typical Turn-Off Delay Time: 7.4 ns, 11.2 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 48 S / 26 S

Rds On - Drain-Source Resistance: 18 mOhms, 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V, 1.2 V