Texas Instruments CSD87352Q5D MOSFETs 30V シンク バック NexFET

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 2.7 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 157.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 12.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 8.5 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 87 S / 51 S

Rds On - Drain-Source Resistance: 9 mOhms, 2.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V