Texas Instruments CSD87381P MOSFETs シンク バック NexFET パワーブロック II A 595-CSD87381PT

Width: 2.5 mm

Height: 0.48 mm

Length: 3 mm

Fall Time: 3 ns, 2.9 ns

Rise Time: 19.3 ns, 16.3 ns

Technology: Si

Unit Weight: 33.200 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Development Kit: CSD87381PEVM-603

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3.9 nC, 8.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 4 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6.7 ns, 7.9 ns

Typical Turn-Off Delay Time: 10.6 ns, 16.8 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S, 89 S

Rds On - Drain-Source Resistance: 16.3 mOhms, 7.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V, 1 V