Vishay General Semiconductor SI7655DN-T1-GE3 MOSFETs -20V 3.6mΩ@10V 40A Pチャネル G-III

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 35 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 225 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 57 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 3 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V