Wolfspeed C3M0280090J-TR シリコンカーバイドMOSFET G3 SiC MOSFET/ リール 900V、280 mΩ

Fall Time: 4 ns

Rise Time: 6.5 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 9.5 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 8 V, + 18 V

Typical Turn-On Delay Time: 10.5 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.1 S

Rds On - Drain-Source Resistance: 385 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V