Bourns TISP61089BDR-S Dual Forward Conducting P-Gate Thyristors Dual P Gate Forward Conducting
生産者: Bourns Model: TISP61089BDR-S - 連絡先
Width: 4 mm
Height: 1.55 mm
Length: 5 mm
Compliance: UL
Unit Weight: 80 mg
Current Rating: 5 uA
Mounting Style: SMD/SMT
Vf - Forward Voltage: 3 V
Breakover Voltage VBO: - 112 V
Holding Current Ih Max: - 150 mA
Breakover Current IBO Max: 6.5 A
Gate Trigger Current - Igt: 5 mA
Gate Trigger Voltage - Vgt: 2.5 V
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Non Repetitive On-State Current: 6.5 A
Off-State Leakage Current @ VDRM IDRM: 5 uA
Rated Repetitive Off-State Voltage VDRM: - 170 V
- 良質な取り決め
- オリジナル保証
- 宅配便
- 買い取り簡単化
