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onsemi NSVJ5908DSG5T1G JFETs NCH+NCH J-FET

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 700 mV

Drain-Source Current at Vgs=0: 32 mA

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24 mS

Vgs - Gate-Source Breakdown Voltage: - 15 V

Vds - Drain-Source Breakdown Voltage: 15 V

  • 良質な取り決め
  • オリジナル保証
  • 宅配便
  • 買い取り簡単化

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