ROHM Semiconductor US6M2TR MOSFET N+P 20V 1.5A/1A

Width: 1.7 mm

Height: 0.77 mm

Length: 2 mm

Fall Time: 6 ns, 10 ns

Rise Time: 9 ns, 8 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 1.6 nC, 2.1 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7 ns, 9 ns

Typical Turn-Off Delay Time: 15 ns, 25 ns

Id - Continuous Drain Current: 1.5 A, 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.5 S, 0.7 S

Rds On - Drain-Source Resistance: 240 mOhms, 390 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V, 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2 V