Advanced Linear Devices ALD1105SBL MOSFET 듀얼 P&N-채널 페어

Technology: Si

Unit Weight: 338 mg

Channel Mode: Enhancement

Configuration: Quad

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel, 2 P-Channel

Number of Channels: 4 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 4.8 mA, 2 mA

Maximum Operating Temperature: + 70 C

Minimum Operating Temperature: 0 C

Rds On - Drain-Source Resistance: 350 Ohms, 1.2 kOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 400 mV