Bourns TISP61089QBDR-S 쿼드 포워드 컨덕팅 P-게이트 사이리스터 쿼드 프로그래머블 프로텍터

Unit Weight: 80 mg

Mounting Style: SMD/SMT

Vf - Forward Voltage: 3 V

Breakover Voltage VBO: - 64 V

Holding Current Ih Max: - 150 mA

Off-State Capacitance CO: 100 pF

Gate Trigger Current - Igt: 5 mA

Gate Trigger Voltage - Vgt: 2.5 V

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Non Repetitive On-State Current: 500 mA

Off-State Leakage Current @ VDRM IDRM: - 5 uA

Rated Repetitive Off-State Voltage VDRM: - 170 V