Central Semiconductor 2N1613 PBFREE BJTs - 바이폴라 트랜지스터 NPN Gen Pur SS

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1.5 V