Central Semiconductor 2N2219 PBFREE BJTs - 바이폴라 트랜지스터 60Vcbo 30Vceo 5.0Vebo 800mA 800mW

Technology: Si

Unit Weight: 3.257 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 800 mA

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 1.6 V