Central Semiconductor 2N2270 PBFREE BJTs - 바이폴라 트랜지스터 NPN 고속 스위치

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 900 mV