Central Semiconductor 2N2907 PBFREE BJTs - 바이폴라 트랜지스터 PNP 실리콘

Unit Weight: 1 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.6 V