Central Semiconductor 2N3300 TIN/LEAD BJTs - 바이폴라 트랜지스터 NPN 60Vcbo 30Vceo 5.0Vebo 8pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 600 mV