Central Semiconductor 2N3839 TIN/LEAD BJTs - 바이폴라 트랜지스터 30Vcbo 15Vceo 2.5V 40mA 200mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 2 GHz

Emitter- Base Voltage VEBO: 2.5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 40 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 15 V