Central Semiconductor 2N4232A TIN/LEAD BJTs - 바이폴라 트랜지스터 60Vcbo 60Vceo 5.0Vebo 5.0A 75W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 100 at 1.5 A, 2 V

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 0.5 A, 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 700 mV