Central Semiconductor 2N4235 TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 60Vcbo 60Vceo 7.0Vebo 100pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 150 at 250 mA, 1 V

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

DC Collector/Base Gain hfe Min: 30 at 250 mA, 1 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 600 mV