Central Semiconductor 2N4236 TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 80Vcbo 80Vceo 7.0Vebo 100pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 600 mV