Central Semiconductor 2N4899 TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 1.0A 25W 60Vcbo 60Vceo 0.6V

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 3 MHz

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 600 mV