Central Semiconductor 2N5209 PBFREE BJTs - 바이폴라 트랜지스터 NPN Gen Pur SS

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 700 mV