Central Semiconductor 2N5429 TIN/LEAD BJTs - 바이폴라 트랜지스터 NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 30 MHz

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 7 A

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 700 mV