Central Semiconductor 2N5961 PBFREE BJTs - 바이폴라 트랜지스터 NPN 저레벨 스위치

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 700 at 10 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV