Central Semiconductor 2N6520 TIN/LEAD BJTs - 바이폴라 트랜지스터 350Vcbo 350Vceo 6.0Vebo 5.0V 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 200 at 30 mA, 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 350 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 1 mA, 10 V

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 300 mV