Central Semiconductor BC547B TIN/LEAD BJTs - 바이폴라 트랜지스터 NPN 50Vcbo 50 Vceo 800mA 625mW 트랜스

Unit Weight: 206 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV