Central Semiconductor BCY79-IX PBFREE BJTs - 바이폴라 트랜지스터 PNP 45V 100mA

Unit Weight: 312.400 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 340 mW

DC Current Gain hFE Max: 460

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 800 mV