Central Semiconductor MJE180 PBFREE BJTs - 바이폴라 트랜지스터 NPN 파워

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.7 V