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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 600
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 600 mA
DC Collector/Base Gain hfe Min: 150
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 1 V
