Central Semiconductor PN4274 TIN/LEAD BJTs - 바이폴라 트랜지스터 NPN 30Vcbo 12Vces 4.5Vceo 100mA 4.0pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 120 at 1 V, 10 mA

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 30 V

DC Collector/Base Gain hfe Min: 35 at 1 V, 10 mA

Collector-Emitter Saturation Voltage: 500 mV