Diodes Incorporated DMC2053UVT-13 MOSFETs MOSFET BVDSS: 8V-24V

Fall Time: 3.6 ns, 18 ns

Rise Time: 3 ns, 7.8 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.6 nC, 5.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 2.6 ns, 3.2 ns

Typical Turn-Off Delay Time: 12.5 ns, 31 ns

Id - Continuous Drain Current: 4.6 A, 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 35 mOhms, 74 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV, 1 V