Diodes Incorporated DMN2004WKQ-7 MOSFETs MOSFET BVDSS: 8V-24V

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 540 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 550 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV