Diodes Incorporated DMN31D5UDA-7B MOSFETs MOSFET BVDSS: 25V-30V

Fall Time: 7.5 ns

Rise Time: 2.2 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 380 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 370 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.2 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.5 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 400 mV