Diodes Incorporated DMP2003UPS-13 MOSFETs MOSFET BVDSS: 8V-24V

Fall Time: 189 ns

Rise Time: 4.9 ns

Technology: Si

Unit Weight: 97 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 177 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 80 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7.8 ns

Typical Turn-Off Delay Time: 377 ns

Id - Continuous Drain Current: 150 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.7 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV