Diodes Incorporated DMT10H025SSS-13 MOSFETs MOSFET BVDSS: 61V-100V

Fall Time: 13.7 ns

Rise Time: 11.2 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 21.4 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12.9 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.2 ns

Typical Turn-Off Delay Time: 27.5 ns

Id - Continuous Drain Current: 7.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V