Diodes Incorporated DMT6007LFGQ-7 MOSFETs MOSFET BVDSS: 41V-60V

Fall Time: 9.7 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 41.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 62.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.7 ns

Typical Turn-Off Delay Time: 23.4 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 S

Rds On - Drain-Source Resistance: 6 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 800 mV