Diodes Incorporated ZXMP6A13FTA MOSFET 60V P-채널 UMOS

Width: 1.4 mm

Height: 1.02 mm

Length: 3.04 mm

Fall Time: 5.7 ns

Rise Time: 2.2 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 806 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 1.6 ns

Typical Turn-Off Delay Time: 11.2 ns

Id - Continuous Drain Current: 1.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.8 S

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V