Diotec Semiconductor DI0A4N45SQ2 MOSFETs MOSFET, SO-8, 450V, 0.4A, 150C, N

Fall Time: 12 ns

Rise Time: 4 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 6.7 ns

Typical Turn-Off Delay Time: 8.5 ns

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.5 Ohms

Vds - Drain-Source Breakdown Voltage: 450 V

Vgs th - Gate-Source Threshold Voltage: 4 V