Diotec Semiconductor DI4A7P06SQ2 MOSFETs MOSFET, SO-8, -60V, -4.7A, 150C, P

Fall Time: 13 ns

Rise Time: 6 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.5 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 155 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V