Infineon BFP 720 H6327 RF 실리콘 저마늄 RF BIP 트랜지스터

Technology: SiGe

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 45 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Emitter- Base Voltage VEBO: 1.2 V

Continuous Collector Current: 25 mA

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 4 V