Infineon BSM15GD120DN2E3224BPSA1 IGBT 실리콘 모듈
ModelBSM15GD120DN2E3224BPSA1
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Technology: Si
Configuration: Full Bridge
Pd - Power Dissipation: 145 W
Gate-Emitter Leakage Current: 150 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 25 A
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