Infineon FD800R45KL3KB5NPSA1 IGBT 실리콘 모듈 4500 V, 800 A 초퍼 IGBT 모듈

Technology: Si

Configuration: Single

Pd - Power Dissipation: 1.6 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 50 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 800 A